This GaN HEMT process features a 0.25µm T-gate. A SiN passivation layer effectively suppresses current collapse, while a source field plate reshapes the channel electric field distribution, significantly improving breakdown voltage. The platform integrates MIM capacitors and TaN thin-film resistors for high-precision passive components. Air bridges are employed to reduce parasitic capacitance and signal crosstalk under high-power conditions, complemented by backside vias for low-thermal-resistance grounding. This process is primarily targeted at MMIC and power transistor applications for Ku-band and below, with a standard operating voltage (Vds) of 28V.

This GaN HEMT process features a 0.45µm T-gate. A SiN passivation layer effectively suppresses current collapse, while a source field plate optimizes the channel electric field distribution, significantly improving device breakdown voltage. The platform integrates MIM capacitors and TaN thin-film resistors for high-precision passive component integration. Air bridges are employed to reduce parasitic capacitance and signal crosstalk under high-power conditions, complemented by backside vias for low-thermal-resistance grounding. This process is primarily targeted at high-power transistor applications for S-band and below, offering high operating voltage and output power capability, with a standard operating voltage (Vds) of 48V.

This 0.30µm GaN HEMT node, based on Boncom's featured technology, adopts a 0.30µm T-gate structure. A SiN passivation layer effectively suppresses current collapse, while a source field plate optimizes channel electric field distribution, significantly improving device breakdown voltage. The platform integrates MIM capacitors and TaN thin-film resistors to meet high-precision passive component requirements. Air bridges are used to reduce parasitic capacitance and signal crosstalk under high-power conditions, complemented by backside vias for low-thermal-resistance grounding. This node is targeted at MMIC and power transistor applications for X-band and below, offering a good balance of frequency characteristics and output power capability. While maintaining a high operating voltage (Vds = 48V), it achieves improved power density and gain performance compared to the 0.45µm process.